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๐Ÿ” razvan pascanu ๐Ÿ“‚ Physics
Showing 6244 results for "razvan pascanu" in Physics
Physics Preprint PDF DOI

Anharmonic phonon coupling enabled by local inversion symmetry breaking at domain walls in ferroelastic

Seyyed Jabbar Mousavi, Vivek Unikandanunni, Niccolo Sellati, Paolo Barone, Martina Basini, Steven L. Johnson, Andrey Shalit, Peter Hamm, Mattia Udina, Thomas Feurer ยท 2026

In ferroelastic materials, spontaneous symmetry breaking leads to the formation of twin domains. Although the bulk crystal typically remains centrosymmetric, inversion symmetry can be locally broken aโ€ฆ

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Thin film synthesis of SrZn2P2 with SrI2 post-annealing for enhanced crystallinity and optoelectronic quality

Sita Dugu, Shaham Quadir, Christopher P. Muzzillo, Zhenkun Yuan, Smitakshi Goswami, Xiaojing Hao, Jialiang Huang, Guillermo Esparza, Baptiste Julien, David Fenning, Jifeng Liu, Geoffroy Hautier, Andriy Zakutayev, Sage R. Bauers ยท 2026

Ternary Zintl phosphides are promising light-absorbing semiconductors for thin-film optoelectronic applications, but strategies for controlling their microstructure and optoelectronic quality remain uโ€ฆ

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Physics Preprint PDF DOI

Raman Characterization of Two-Dimensional Quasiperiodic Antiferromagnets on Various Lattices: Spin-Orbit Mechanism

Takashi Inoue, Shoji Yamamoto ยท 2026

We study first-order (single-magnon) inelastic light scatterings in spin-$\frac{1}{2}$ two-dimensional quasiperiodic antiferromagnets in comparison with those emergent on periodic lattices. Unlike secโ€ฆ

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Second Harmonic Generation Through Backward Raman Scattering in Magnetized Plasmas Driven by Circularly Polarized Intense Lasers

S. S. Ghaffari-Oskooei, A. A. Molavi Choobini ยท 2026

A fluid-based theoretical framework is developed to describe the nonlinear cascade linking primary BRS-driven plasma wave amplification, oscillating two-stream instability (OTSI), nonlinear current geโ€ฆ

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Reversible Modulation of Thermal Conductivity in GaN via Strain-Driven Reorganization of Dislocation Ensembles

Shantal Adajian, Fanghao Zhang, Zeyu Xiang, Tanay Tak, Miguel Zepeda-Rosales, Nikhil Tulshibagwale, Kirk Fields, Bolin Liao ยท 2026

Crystalline defects are generally regarded as static phonon scatterers that irreversibly suppress thermal transport. Here we show that elastic strain can dynamically and reversibly reorganize dislocatโ€ฆ

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Dichroic Raman probes for chiral edge modes

Avedis Neehus, Johannes Knolle ยท 2026

The identification and manipulation of charge-neutral fractionalized quasi-particles, in particular chiral edge modes (CEM), is a long-standing quest in physics. Remarkably, the microscopically mediatโ€ฆ

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Programming long-range interactions in analog quantum simulators

Cristian Tabares, Alberto Munoz de las Heras, Jan T. Schneider, Alejandro Gonzalez-Tudela ยท 2026

Long-range interactions are the source of many equilibrium and out-of-equilibrium quantum many-body phenomena. Analog simulators based on ionic, atomic, superconducting, and molecular systems provide โ€ฆ

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Electronic and Vibrational Properties of On-Surface Synthesized Gulf-Edged Chiral Graphene Nanoribbons

Xuanchen Li, Amogh Kinikar, Vikas Sharma, Andres Ortega Guerrero, George F. S. Whitehead, Mickael Lucien Perrin, Carlo A. Pignedoli, Roman Fasel, Ashok Keerthi, Gabriela Borin Barin ยท 2026

On-surface synthesis enables the fabrication of graphene nanoribbons (GNRs) with atomic precision, allowing their electronic, optical, and magnetic properties to be tuned by engineering edge structureโ€ฆ

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Effect of Mn Substitution on Superconductivity in PrFeAs(O,F): Role of Magnetic Impurities

Priya Singh, Konrad Kwatek, Tatiana Zajarniuk, Taras Palasyuk, Cezariusz Jastrzebski, A. Szewczyk, Micha{l} Wierzbicki, Shiv J. Singh ยท 2026

We investigate Mn substitution at the Fe site in PrFe1-xMnxAsO0.7F0.3 (0 to 0.1) using structural, Raman, density functional theory (DFT), transport, and magnetic measurements. X-ray diffraction and Rโ€ฆ

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The gauge action on semi-discrete Lax representations and its invariants

Sergei Igonin ยท 2026

Semi-discrete (differential-difference) matrix Lax representations (Lax pairs) play an essential role in the theory of integrable differential-difference equations. Fix a (1+1)-dimensional evolutionโ€ฆ

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Griffiths-like phase, spin-phonon coupling, and exchange-bias in the disordered double perovskite GdSrCoMnO$_{6}$

Gyanti Prakash Moharana, Diptikanta Swain, Hanuma Kumar Dara, Debendra Prasad Panda, S. N Sarangi ยท 2026

We report structural, magnetic, and Raman studies of the disordered double perovskite GdSrCoMnO$_{6}$~(GSCM). DC magnetization shows a ferromagnetic transition at $T_{C} \approx 153$~K. The inverse suโ€ฆ

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When heat goes astray -- non-local heating in a semiconductor

Mahmoud Elhajhasan, Elena Trukhan, Katharina Dudde, Guillaume Wursch, Jana Lierath, Ian Rousseau, Raphael Butte, Nicolas Grandjean, Nakib Haider Protik, Giuseppe Romano, Gordon Callsen ยท 2026

Heating of semiconductor devices limits their performance and lifetime, which must be addressed by thermal management starting at the heat source. It is a common assumption that the heat source and thโ€ฆ

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Polarized light Raman scattering by an atom near an ultrathin periodically aligned carbon nanotube film

SK Firoz Islam, Michael Dean Pugh, Igor V. Bondarev ยท 2026

We present a systematic theoretical study of the Raman scattering effect for a two-level atomic system in near proximity of an ultrathin dielectric film with an embedded parallel array of periodicallyโ€ฆ

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Unraveling the significance of Raman modes, Gruneisen parameters and phonon lifetimes in the hexagonal allotropes of Silicon and Germanium compounds

Lekshmi S M, Upasana Agrawal, Akarsh Jain, Siddharth Sastri, Suvadip Das ยท 2026

Advancement in quantum information and quantum technologies has ushered in a new era of technological revolution in large scale atomistic simulation and efficient system on a chip device fabrication. โ€ฆ

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The Origin of Linearly Polarized Photoluminescence in WS2/WSe2 Moir\'e Superlattices

Yuto Urano, Ryo Tamura, Yui Tamogami, Toshikaze Kariyado, Yasumitsu Miyata, Daichi Kozawa, Kenji Watanabe, Takashi Taniguchi, Ryo Kitaura ยท 2026

Reliable optical control of valley degrees of freedom in moir\'e excitons requires that the emitted polarization faithfully reflect the underlying valley state. Here, we show that linearly polarized pโ€ฆ

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Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning

Haitao Yang, Ruiqi Hu, Heng Wu, Xiaolong He, Yan Zhou, Yizhe Xue, Kexin He, Wenshuai Hu, Haosen Chen, Mingming Gong, Xin Zhang, Ping-Heng Tan, Eduardo R Hernandez, Yong Xie ยท 2026

Two-dimensional materials are expected to play an important role in next-generation electronics and optoelectronic devices. Recently, twisted bilayer graphene and transition metal dichalcogenides haveโ€ฆ

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Lattice dynamics and complete polarization analysis of Raman-active modes in LaInO$_3$

Jonas Rose, Hai Nguyen, Moritz Mei{ss}ner, Zbigniew Galazka, Roland Gillen, Georg Hoffmann, Oliver Brandt, Manfred Ramsteiner, Markus R. Wagner, Hans Tornatzky ยท 2026

In this study, we present a comprehensive analysis of the Raman active phonon modes in orthorhombic LaInO$_3$ based on a combination of polarization-angle resolved Raman spectroscopy and density functโ€ฆ

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Quantum fluctuations and the emergence of in-gap Higgs mode in superconductors

Sida Tian, Naoto Tsuji, Dirk Manske ยท 2026

We extend the well-established action of the Higgs mode in $s$-wave superconductors to include quantum fluctuations (QFs). We find that already one-loop quantum corrections to the Higgs propagator shiโ€ฆ

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First-principles study of infrared, Raman, piezoelectric and elastic properties of Mg-IV-N\textsubscript{2} (IV = Ge, Si, Sn)

Sarker Md. Sadman, Walter R. L. Lambrecht ยท 2026

Mg-IV-N\textsubscript{2} compounds with IV=Si, Ge, Sn are ultra-wide band gap semiconductors with various potential electronic and optoelectronic applications. They share the \textit{Pna}2\textsubscriโ€ฆ

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Ultra-high-vacuum cluster tool for epitaxial synthesis and optical spectroscopy of reactive 2D materials

M. Dembecki, J. Schabesberger, M. Bissolo, A. Thurn, A. Ulhe, P. Avdienko, J. Ulrichs, H. Riedl, G. Koblmuller, E. Zallo, J.J. Finley ยท 2026

The large-area synthesis of high-crystalline-quality two-dimensional (2D) materials is at the core of novel material integration for semiconductor technology. This effort relies on developing fabricatโ€ฆ

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