6,244+ open-access research outputs.
In ferroelastic materials, spontaneous symmetry breaking leads to the formation of twin domains. Although the bulk crystal typically remains centrosymmetric, inversion symmetry can be locally broken aโฆ
Ternary Zintl phosphides are promising light-absorbing semiconductors for thin-film optoelectronic applications, but strategies for controlling their microstructure and optoelectronic quality remain uโฆ
We study first-order (single-magnon) inelastic light scatterings in spin-$\frac{1}{2}$ two-dimensional quasiperiodic antiferromagnets in comparison with those emergent on periodic lattices. Unlike secโฆ
A fluid-based theoretical framework is developed to describe the nonlinear cascade linking primary BRS-driven plasma wave amplification, oscillating two-stream instability (OTSI), nonlinear current geโฆ
Crystalline defects are generally regarded as static phonon scatterers that irreversibly suppress thermal transport. Here we show that elastic strain can dynamically and reversibly reorganize dislocatโฆ
The identification and manipulation of charge-neutral fractionalized quasi-particles, in particular chiral edge modes (CEM), is a long-standing quest in physics. Remarkably, the microscopically mediatโฆ
Long-range interactions are the source of many equilibrium and out-of-equilibrium quantum many-body phenomena. Analog simulators based on ionic, atomic, superconducting, and molecular systems provide โฆ
On-surface synthesis enables the fabrication of graphene nanoribbons (GNRs) with atomic precision, allowing their electronic, optical, and magnetic properties to be tuned by engineering edge structureโฆ
We investigate Mn substitution at the Fe site in PrFe1-xMnxAsO0.7F0.3 (0 to 0.1) using structural, Raman, density functional theory (DFT), transport, and magnetic measurements. X-ray diffraction and Rโฆ
Semi-discrete (differential-difference) matrix Lax representations (Lax pairs) play an essential role in the theory of integrable differential-difference equations. Fix a (1+1)-dimensional evolutionโฆ
We report structural, magnetic, and Raman studies of the disordered double perovskite GdSrCoMnO$_{6}$~(GSCM). DC magnetization shows a ferromagnetic transition at $T_{C} \approx 153$~K. The inverse suโฆ
Heating of semiconductor devices limits their performance and lifetime, which must be addressed by thermal management starting at the heat source. It is a common assumption that the heat source and thโฆ
We present a systematic theoretical study of the Raman scattering effect for a two-level atomic system in near proximity of an ultrathin dielectric film with an embedded parallel array of periodicallyโฆ
Advancement in quantum information and quantum technologies has ushered in a new era of technological revolution in large scale atomistic simulation and efficient system on a chip device fabrication. โฆ
Reliable optical control of valley degrees of freedom in moir\'e excitons requires that the emitted polarization faithfully reflect the underlying valley state. Here, we show that linearly polarized pโฆ
Two-dimensional materials are expected to play an important role in next-generation electronics and optoelectronic devices. Recently, twisted bilayer graphene and transition metal dichalcogenides haveโฆ
In this study, we present a comprehensive analysis of the Raman active phonon modes in orthorhombic LaInO$_3$ based on a combination of polarization-angle resolved Raman spectroscopy and density functโฆ
We extend the well-established action of the Higgs mode in $s$-wave superconductors to include quantum fluctuations (QFs). We find that already one-loop quantum corrections to the Higgs propagator shiโฆ
Mg-IV-N\textsubscript{2} compounds with IV=Si, Ge, Sn are ultra-wide band gap semiconductors with various potential electronic and optoelectronic applications. They share the \textit{Pna}2\textsubscriโฆ
The large-area synthesis of high-crystalline-quality two-dimensional (2D) materials is at the core of novel material integration for semiconductor technology. This effort relies on developing fabricatโฆ
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